| Autor: |
Leerungnawarat, P., Cho, H., Hays, D., Lee, J., Devre, M., Reelfs, B., Johnson, D., Sasserath, J., Abernathy, C., Pearton, S. |
| Zdroj: |
Journal of Electronic Materials; May 2000, Vol. 29 Issue: 5 p586-590, 5p |
| Abstrakt: |
Abstract: By exploiting the relatively high volatility of In etch products in CH4/H2 discharges, we were able to obtain a maximum selectivity for InGaP over GaAs of ∼20 at low ion energies and fluxes. Three different inert gas additives to CH4/H2 were examined, with Ar producing higher selectivities than He or Xe. This process is attractive for selective removal of the InGaP emitter in the fabrication of heterojunction bipolar transistors. |
| Databáze: |
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| Externí odkaz: |
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