| Autor: |
Cross, JeffreyS., Fujiki, Mitsushi, Tsukada, Mineharu, Kotaka, Yasutoshi, Goto, Yasuyuki |
| Zdroj: |
Integrated Ferroelectrics; September 1998, Vol. 21 Issue: 1-4 p263-271, 9p |
| Abstrakt: |
AbstractPb(Zr, Ti)O3[PZT] capacitors were prepared by CSD on sputtered electrodes of SrRuO3(SRO)/Pt on SiO2/Si wafers. The SRO/Pt bottom electrodes were deposited using two different conditions: (1) at 600°C in-situ (abbreviated HT), and (2) at low temperature followed by a post-deposition anneal at 600°C (abbreviated LTA). The PZT orientation and switching pulse polarization, i.e. HT-SRO (43 μC cm-2) and LTA-SRO (32 μC cm-2) were strongly dependent on the bottom electrodes. Yet neither capacitor showed polarization loss resulting from switching 108times with ± 5 V pulses. These results indicate that the PZT ferroelectric properties are greatly influenced by the SRO bottom electrode processing conditions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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