| Autor: |
Ito, Yasuyuki, Ushikubo, Maho, Yokoyama, Seiichi, Matsunaga, Hironori, Atsuki, Tsutomu, Yonezawa, Tadashi, Ogi, Katsumi |
| Zdroj: |
Integrated Ferroelectrics; January 1997, Vol. 14 Issue: 1-4 p123-131, 9p |
| Abstrakt: |
AbstractA new low temperature processing method to prepare SrBi2Ta2O9thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition, respectively. The 1st annealing was performed in a 760 Torr-oxygen ambient at 600°C for 30 min; the 2nd annealing was performed in a 5 Torr-oxygen ambient at 600 °C for 30 min. The films were well crystallized and fine-grained after the 2nd annealing. The electrical characteristics of the 200-nm-thick film obtained by this new process, i.e., remanent polarization (Pr), coercive field (Ec), and the leakage current density (II), were as follows; Pr= 8.5 μC/cm2, Ec=30 kV/cm, IL=1×10−7A/cm2(at 3V). This new processing is very attractive for highly integrated ferroelectric nonvolatile memory applications. |
| Databáze: |
Supplemental Index |
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