| Autor: |
Karasawa, Junichi, Hamada, Yasuaki, Ohashi, Koji, Natori, Eiji, Oguchi, Koichi, Shimoda, Tatsuya, Joshi, Vikram, Solayappan, Nararyan, Lim, Myungho, Celinska, Jolanta, Mcmillan, LarryD., De Araujo, Carlos A. Paz |
| Zdroj: |
Integrated Ferroelectrics; January 2002, Vol. 48 Issue: 1 p193-202, 10p |
| Abstrakt: |
In order to reduce the thermal budget for SBT crystallization process in planer type stack cell FeRAMs, Rapid Thermal Anneal (RTA) based process for SBT thin film was investigated. Our new process is characterized by crystallization in RTA without any furnace annealing process, and includes a low temperature recovery annealing process (hereafter RTB (Reduced Thermal Budget) process). As a result of only 750C RTA for accumulated time of 60s without furnace annealing process, the sufficient ferroelectric properties were derived in comparison with that of conventional SBT thin film. In the RTB process, two approaches to improve the break down voltage were carried out. First, we used UV exposure during the baking process. By optimizing the UV assisted baking process, a high break down field due to smooth surface morphology was successfully obtained, resulting in break down field of more than 1.2 MV/cm. Secondly, ultra thin SBT films as a top few layer on the base SBT thin film were employed. After optimization of the ultra thin SBT layer thickness, a very smooth SBT surface was successfully achieved, resulting in improvement of the break down field of more than 1.1 MV/cm. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
