| Autor: |
Yu, R., Beccue, S., Chang, M.F., Nary, K., Nubling, R., Pedrotti, K., Pierson, R., Runge, K., Sheng, N.H., Thomas, P., Zampardi, P., Wang, K.C. |
| Zdroj: |
Solid State Electronics; October 1997, Vol. 41 Issue: 10 p1419-1431, 13p |
| Abstrakt: |
Production and laboratory AlGaAs/GaAs HBT processes were developed, enabling implementation of high-precision and high-speed circuits to meet the ever increasing demands on information bandwidths. Under normal bias conditions, the production HBT process shows transistor ftand fmaxabove 50 GHz, while the laboratory process reveals ftof 60 GHz and fmaxof 110 GHz. With these two HBT processes, numerous high-speed and high-precision circuits for signal and data processing were implemented. In particular, we have designed and fabricated a 8-bit, 2 GS s−1ADC and a 6-bit, 4 GS s−1ADC for instrumentation and digital receiver applications; a 40 GBit s−14:1 multiplexer and an 8-channel, 2.5 GBit s−1laser driver array for optical communication transmitters; a 50 dBΩ, 25 GHz preamplifier, a DC-26 GHz 10–16 dB variable gain amplifer, a 30 GBit s−1data/clock regeneration circuit, two 40 GBit s−1nonlinear (differentiate/rectify and delay/multiply) clock regeneration circuits, and a 40 GBit s−1phase detector circuit for optical communication receivers. |
| Databáze: |
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