| Autor: |
Tas, Guray, Morath, Chris, Stoner, Robert, Lavoie, Christian, Cabral Jr., Cyril, Harper, James, Huang, Yaw-Lin, Huang, Donald, Chen, Ren |
| Předmět: |
|
| Zdroj: |
Semiconductor International; Feb2003, Vol. 26 Issue 2, p70, 4p, 5 Graphs |
| Abstrakt: |
Discusses various aspects of cobalt silicide, which is made use of in metal oxide semiconductors. Factors to be considered during processing of cobalt silicide films; Effect of anneal temperature on the sheet resistance of cobalt silicide; Utility of picosecond ultrasonic technology in monitoring the production process of cobalt silicide. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
