| Autor: |
Lian, Sean, Forouhi, A.R., Li, G. G., Bloomer, Iris |
| Předmět: |
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| Zdroj: |
Semiconductor International; Jul98, Vol. 21 Issue 8, p253, 4p, 1 Diagram, 8 Graphs |
| Abstrakt: |
Presents information on the use of silicon oxynitride (SiON) anti-reflective (AR) coatings for advanced lithography. Information on the use of SiON in the manufacturing of semiconductor devices; What absorption of light by the SiON film and reflectance of light at the air/film and film/substrate interfaces depends on; Factors which influence the function of any integrated circuit. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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