| Autor: |
Smirnova, O. Yu., Stelmach, G. F. |
| Předmět: |
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| Zdroj: |
International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2012, p483-485, 3p, 2 Graphs |
| Abstrakt: |
Infrared absorption spectroscopy is used to study hydrogen-related defects in germanium implanted with 300 keV protons. After long thermal annealing at 400 °C samples are found to exhibit broad absorption band located at 870 cm-1 (Δv = 70 cm-1). Using of the valence force field constants theory it is confirmed that this band is associated with the A1 bend mode of GeH2 molecule located in platelets. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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