| Autor: |
Torunbalci, M.M., Tatar, E., Alper, S.E., Akin, T. |
| Zdroj: |
Procedia Engineering; Apr2012, Vol. 25, p900-903, 4p |
| Abstrakt: |
Abstract: This paper presents experimental comparison of a modified silicon-on-glass (M-SOG) process to a previously-reported classical SOG (C-SOG) process based on the use of SOI wafers, yielding a stress free <111> silicon structural layer with desired structure thickness. The basic difference between these processes is the sequence of the step at which the silicon microstructures are defined by DRIE, making M-SOG more robust against critical dimension (CD) variations. Overall, M-SOG provides a simple, high yield, reliable, and robust solution for producing high performance MEMS inertial sensors, and these advantages are experimentally verified over C-SOG, both completed by following the identical process parameters and by using the same mask set. [Copyright &y& Elsevier] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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