| Autor: |
ZHANG Cong-chun, YANG Chun-sheng, DING Gui-fu, MAO Hai-ping, NI Zhi-ping |
| Zdroj: |
Journal of Shanghai Jiao Tong University; Oct2004 Supplement, Vol. 38, p118-121, 4p |
| Abstrakt: |
A reactive ion etching process of commercial PMMA was developed to fabricate microstructures. The polymer decomposition in plasma was described. Ion bombardment of the polymer surface is characterized as the energetically dominant activation mechanism. The effect of process parameters on the etching rate and profile was discussed. It is demonstrated that the etching rate initially increases with the increasing gas pressure but decreases after 6. 65 Pa, too high pressure is deleterious to the anisotropy etching. The etching rate increases continually with the increased power density, but the power can not surpass 50 W to prevent sample from distorting. The microstructures with deep and smooth sidewall can be achieved by an optimum etching process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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