Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices.

Autor: Richard T. Beeler, Gordon J. Grzybowski, Radek Roucka, Liying Jiang, Jay Mathews, David J. Smith, José Menéndez, Andrew V. G. Chizmeshya, John Kouvetakis
Zdroj: Chemistry of Materials; Oct2011, Vol. 23 Issue 20, p4480-4486, 7p
Databáze: Supplemental Index