Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices.
Autor: | Richard T. Beeler, Gordon J. Grzybowski, Radek Roucka, Liying Jiang, Jay Mathews, David J. Smith, JoseÌ MeneÌndez, Andrew V. G. Chizmeshya, John Kouvetakis |
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Zdroj: | Chemistry of Materials; Oct2011, Vol. 23 Issue 20, p4480-4486, 7p |
Databáze: | Supplemental Index |
Externí odkaz: |