| Autor: |
Jian-You Lin, Shin-Hong Wang, Ting-Ting Chen, Chih-Yen Chen, Li-Jen Chou, Jenn-Chang Hwang, Chwung-Shan Kou |
| Předmět: |
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| Zdroj: |
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 7, pD426-D429, 4p, 5 Diagrams, 3 Graphs |
| Abstrakt: |
One-dimensional boron-doped submicron diamond rods (SDRs) were fabricated on diamond/Si substrates by oxygen plasma etching. The SDRs are ∼4.5 μm in height and ∼383 nm in diameter. Iron oxide coated on SDRs is essential in the formation of one-dimensional SDRs. However, the as-etched SDRs suffer with high turn-on field (ETO) and low field emission current density (JFE) due to the iron oxide. A huge improvement in the field emission characteristics can be achieved by removing iron oxide using a wet-etch process in a diluted HCl (37%). After the wet-etch, the SDRs exhibit a low ETO value of 4.5 V/μm (at 10 μA/cm2) and a high JFE value of 30 mA/cm2 (at 8.5 V/μm). The FE emitter is only stable for a short period of time at high current stress owing to the rounding of the tips of SDRs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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