| Autor: |
Treideris, M., Šimkienė, I., Kašalynas, I., Selskis, A., Babonas, J. |
| Předmět: |
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| Zdroj: |
International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2010, p118-121, 4p, 1 Black and White Photograph, 2 Graphs |
| Abstrakt: |
The reflectance of porous GaP layers on GaP substrates has been investigated in the frequency range 300-500 cm-1 by Fourier transform infrared (FTIR) reflectance spectroscopy. Porous GaP layers were fabricated by anodic electrochemical etching technique. The structure of porous layers formed by using various electrolytes was studied by SEM technique. The correlation between particular features in the infrared reflection spectra in reststrahlen region and morphology of porous layers was analyzed and discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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