| Autor: |
Jaehong Kim, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jaehyun Cho, Wonbaek Lee, Daeyoung Gong, Byoungdeog Cho, Youngkuk Kim, Jinju Park, Kwangyeol Kim, Junsin Yi |
| Předmět: |
|
| Zdroj: |
Journal of The Electrochemical Society; 2010, Vol. 157 Issue 2, pH182-H185, 4p |
| Abstrakt: |
Silicon dioxide (SiO2) films were deposited using atmospheric pressure chemical vapor deposition (APCVD) with tetraethyl orthosilicate (TEOs) and ozone (O3) as reactant gases. These films were used as the gate dielectric of low temperature polycrystalline silicon (LTPS) thin film transistors (TETs). O3 gas was chosen instead of oxygen (O2) gas because the latter is not compatible with the low temperature processing of LTPS TFTs. SiO2 films deposited at low temperatures (<450°C) have low Si-OH contents and electrical properties desirable for gate insulator materials. Although the LTPs TFTs were fabricated using low cost SiO2 films deposited by APCVD as the gate dielectric, the fabricated devices exhibited a field-effect mobility of 49 cm2/V s and a subthreshold swing of 490 mV/dec. The results demonstrate that SiO2 deposited by APCVD with TEOS and O3 is a promising material for low cost and high quality gate insulators for LTPS TFTs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
