Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials.

Autor:	Hojun Ryu, Sein Kwon, Sanghoon Cheon, Seong Mok Cho, Woo Seok Yang, Chang Auck Choi
Předmět:	INFRARED detectors BOLOMETERS ELECTRIC resistors CHEMICAL vapor deposition NANOSTRUCTURED materials ANTIMONY ALLOYS MICROFILMS SOUND pressure
Zdroj:	ETRI Journal; 2009, Vol. 31 Issue 6, p703-708, 6p, 2 Color Photographs, 1 Diagram, 3 Charts, 4 Graphs
Abstrakt:	Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film. [ABSTRACT FROM AUTHOR]
Databáze:	Supplemental Index
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