| Autor: |
Veliadis, Victor, McNutt, Ty, Snook, Megan, Hearne, Harold, Potyraj, Paul, Junghans, Jeremy, Scozzie, Charles |
| Předmět: |
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| Zdroj: |
International Journal of Power Management Electronics; 2008, p1-8, 8p, 2 Color Photographs, 2 Diagrams, 13 Graphs |
| Abstrakt: |
SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at 300?C. 0.19 cm² 1200 V normally-on and 0.15 cm² low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2V and a specific onstate resistance of 5.4mΩcm². The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15mΩcm². The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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