Fine-Tuning CMP.

Autor: DeJule, Ruth
Předmět:
Zdroj: Semiconductor International; Sep2008, Vol. 31 Issue 10, p52-56, 5p
Abstrakt: The article focuses on the emergence of methods in reducing defectivity and improve chemical mechanical planarization (CMP). New slurries for copper metallization and interconnects and new pad groove configurations were the primary changes in CMP. Hybrid particles from the combination of polymers with ceramics demonstrate potential in improving planarity and defectivity. The use of barrier materials such as ruthenium reportedly reduced or eliminated the need for a seed layer as well as allowed direct plating of copper onto the barrier.
Databáze: Supplemental Index