Autor:	Schottky, W.
Zdroj:	Halbleiterprobleme; 1954, p295-298, 4p
Abstrakt:	It is suggested that for the theoretical treatment of p, n contacts the emission current originating at the boundary by thermal pair generation is especially suitable for the discussion of current characteristics and for comparison with pair generation in the bulk of either semiconductor. [ABSTRACT FROM AUTHOR]
Databáze:	Supplemental Index
Externí odkaz:	Zobrazit plný text záznamu