| Autor: |
Saraniti, M., Ravaioli, U., Millithaler, J. -F., Varani, L., Palermo, C., Mateos, J., González, T., Perez, S., Pardo, D., Knap, W., Lusakowski, J., Dyakonova, N., Bollaert, S., Cappy, A. |
| Zdroj: |
Nonequilibrium Carrier Dynamics in Semiconductors; 2006, p291-294, 4p |
| Abstrakt: |
Recent experiments have shown that High Electron Mobility Transistors can emit electromagnetic radiation in the TeraHertz range. The emission spectra exhibit two peaks: one around 1 THz is sensitive to drain and gate voltages, and another one around 5 THz is fixed. In order to get physical insight into the microscopic mechanism at the basis of the radiation emission we have performed a Monte Carlo (MC) simulation of the measured transistors using the current noise spectra as sensitive probes to detect the presence of electrical instabilities. Numerical results are found to be in good agreement with experiments confirming the presence of an oscillatory dynamics in the TeraHertz range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
