Silicon-Based Ion Channel Platforms.

Autor: Ravaioli, U., Wilk, S. J., Petrossian, L., Goryll, M., Tang, J. M., Eisenberg, R. S., Saraniti, M., Goodnick, S. M., Thornton, T. J.
Zdroj: Nonequilibrium Carrier Dynamics in Semiconductors; 2006, p201-204, 4p
Abstrakt: We demonstrate that silicon substrates can be used as a universal platform for recording the electrical activity of ion channels inserted into suspended bilayers. The bilayers span narrow openings etched into silicon substrates using standard microelectronics processing techniques. Reversible Ag/AgCl electrodes are integrated around the circumference of the opening and provide long-term stable measurements of the ion channel currents. To demonstrate the utility of the silicon platform we have measured the electrical activity of OmpF porin ion channel proteins inserted into a lipid bilayer formed using the Montal — Mueller method. Systematic measurements of the lipid giga-seal characteristics are presented, including ac conductance measurements and statistical analysis in order to resolve the conductance of individual ion-channels. [ABSTRACT FROM AUTHOR]
Databáze: Supplemental Index