| Autor: |
Grasser, Tibor, Selberherr, Siegfried, Herrmann, T., Klix, W., Stenzel, R., Duenkel, S., Illgen, R., Hoentschel, J., Feudel, T., Horstmann, M. |
| Zdroj: |
Simulation of Semiconductor Processes & Devices 2007; 2007, p101-104, 4p |
| Abstrakt: |
The influence of line edge and gate interface roughness on SOI-MOSFET performance is studied by simulation. Both types of roughness were implemented in the device simulator SIMBA through the Fourier synthesis approach and the simulations were performed with the drift diffusion and the quantum drift diffusion models. Scaled transistors showed more sensitivity to rough interfaces with shallow junctions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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