High-intensity laser pulse propagation in semiconductors.

Autor: Kramer, Bernhard, Giessen, Harald, Knorr, Andreas, Kuhl, Jürgen, Koch, Stephan W.
Zdroj: Advances in Solid State Physics 39; 1999, p483-493, 11p
Abstrakt: We investigate experimentally and theoretically how intense laser pulses in the ultrashort regime propagate in the vicinity of the free exciton resonance of bulk semiconductors. We can identify three regimes: The linear and damped polariton propagation, propagation including coherent carrier-density Rabi oscillations, and propagation at pulse areas far beyond π, where the nonlinear optical properties of the semiconductor dominate. [ABSTRACT FROM AUTHOR]
Databáze: Supplemental Index