| Autor: |
Bernstein, Kerry, Rohrer, Norman J. |
| Zdroj: |
SOI Circuit Design Concepts (9780387740997); 2002, p67-94, 28p |
| Abstrakt: |
This chapter will present the unique circuit responses that are present with partially depleted SOI in static circuits. In particular, the inverter, NAND and passgate structure will be investigated. The history effect, noise margins and bipolar current will be discussed with respect to these circuits. The effects of leakage and reduced diffusion capacitance will be covered. To open this chapter, let's first discuss the common SOI parameters that are important to the design point SOI circuits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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