| Autor: |
Cullis, A. G., Hutchison, J. L., Grunbaum, E., Barkay, Z., Shapira, Y., Barnham, K., Bushnell, D. B., Ekins-Daukes, N. J., Mazzer, M., Wilshaw, P. R. |
| Zdroj: |
Microscopy of Semiconducting Materials; 2005, p503-506, 4p |
| Abstrakt: |
The method of ionisation potential (dopant contrast) microscopy in the HRSEM is applied to the study of the electric field distribution in p-i-n structures used as quantum well solar cells. Our results show a secondary electron signal which varies between the different layers, being greatest in the p-type and smallest in the n-type regions respectively. The stacks of 8 nm wide quantum wells and their corresponding barriers are clearly distinguished in the intrinsic region of the devices. In-situ observation of reverse biased structures has been performed to determine the effect of bias on the potential distribution within the devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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