| Autor: |
Cullis, A. G., Hutchison, J. L., Kamino, T., Yaguchi, T., Konno, M., Hashimoto, T., Ohnishi, T., Umemura, K. |
| Zdroj: |
Microscopy of Semiconducting Materials; 2005, p409-412, 4p |
| Abstrakt: |
A method is proposed for the three dimensional physical failure analysis of electronic devices. A micro-sampling technique was employed for extraction of a piece of sample from a defective cell. The extracted sample was shaped into a pillar and mounted on the tip of a needled specimen stub. Physical failure analysis of the sample was then performed using a dedicated focused ion beam (FIB) — scanning transmission electron microscope (STEM) system. This technique was applied to the physical failure analysis of an inadequately insulated gate oxide layer in an electronic device. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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