| Autor: |
Cullis, A. G., Hutchison, J. L., Beanland, R., Sánchez, A. M., Papworth, A. J., Gass, M. H., Goodhew, P. J. |
| Zdroj: |
Microscopy of Semiconducting Materials; 2005, p163-166, 4p |
| Abstrakt: |
We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak position which is independent of sample thickness but varies slightly with diffraction condition. We interpret this behaviour as being primarily due to changes in lattice parameter, thus giving a new technique for the quantitative measurement of strain at the nm scale. The resolution of the technique is comparable to that of annular dark field images. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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