| Autor: |
Burki, Ibrahim, Rivas, Cristian, Hurst, Jeff, Weldon, Matt, Yeung, Henry, Price, Jimmy, Lysaght, Patrick, Hung, P. Y., Jammy, Raj |
| Předmět: |
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| Zdroj: |
Semiconductor International; May2008, Vol. 31 Issue 5, p44-48, 5p |
| Abstrakt: |
The article focuses on the emergence of vacuum ultraviolet spectroscopic reflectometry (VUVSR) to address metrology platform complexity and fundamental optical constraints that limited the capabilities of measurement systems for advanced technology nodes. At Sematech, wafers comprised of interfacial layer (IL) and high-k film thickness and composition variations were fabricated to show the VUVSR measurement capability of resolving physical variations corresponding to each layer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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