Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices.

Autor: Yazhou Deng, Mingjie Wang, Ziji Xiang, Kejia Zhu, Tao Hu, Longyu Lu, Yu Wang, Yupeng Ma, Bin Lei, Xianhui Chen
Zdroj: Nano Letters; 7/31/2024, Vol. 24 Issue 30, p9302-9310, 9p
Databáze: Supplemental Index