Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites.

Autor: Mallik, Nitin, Hajhemati, Javid, Frégnaux, Mathieu, Coutancier, Damien, Toby, Ashish, Zhang, Shan-Ting, Hartmann, Claudia, Hüsam, Elif, Saleh, Ahmed, Vincent, Thomas, Fournier, Olivier, Wilks, Regan G., Aureau, Damien, Félix, Roberto, Schneider, Nathanaelle, Bär, Marcus, Schulz, Philip
Zdroj: Nano Energy; Jul2024, Vol. 126, pN.PAG-N.PAG, 1p
Abstrakt: With the rapidly advancing perovskite solar cell (PSC) technology, dedicated interface engineering is critical for improving device stability. Atomic layer deposition (ALD) grown metal oxide films have drawn immense attention for the fabrication of stable PSC. Despite the advantages of ALD, the deposition of metal oxides directly on bare perovskite has so far not been achieved without damaging the perovskite layer underneath. In addition, the changes to the physicochemical and electronic properties at the perovskite interface upon exposure to the ALD precursors can alter the material and hence device functionality. Herein, we report on a synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) investigation of the interface between metal halide perovskite (MHP) absorber and ALD-SnO 2 electron transport layer. We find clear evidence for the formation of new chemical species (nitrogen compound, lead dihalides) and an upward band bending in the MHP and downward band bending in the SnO 2 towards the MHP/ALD-SnO 2 interface. The upward bending at the interface forms an electron barrier layer of ∼400 meV, which is detrimental to the PSC performance. In addition, we assess the effectiveness of introducing a thin interlayer of the organic electron transport material Phenyl-C61-butyric acid methyl ester (PCBM) between MHP and ALD-SnO 2 to mitigate the effects of ALD deposition. [Display omitted] • Direct probe of the chemical and electronic properties at the buried halide perovskite/ ALD-SnO 2 layers by HAXPES. • Interfacial defects from degraded formamidinium due to chemical reactions between perovskite and ALD precursors. • Suggested band bending at the perovskite/ALD-SnO 2 interface, resulting in an electron barrier detrimental to device operation. • Use of PCBM interlayer between perovskite and SnO 2 partly mitigates the chemical reactions. [ABSTRACT FROM AUTHOR]
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