Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy.

Autor: Park, Seonwoo, Mun, Suhyun, Kim, Kyoung Hwa, Yang, Min, Chun, Young Tea, Yi, Sam Nyung, Ahn, Hyung Soo, Lee, Jae Hak, Jang, Yeon-Suk, Lee, Won Jae, Shin, Myeong-Cheol, Koo, Sang-Mo
Zdroj: Journal of the Korean Physical Society; Feb2024, Vol. 84 Issue 3, p198-207, 10p
Databáze: Supplemental Index
Externí odkaz: