| Autor: |
Roy, Pradip K., Merchant, Sailesh M. |
| Předmět: |
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| Zdroj: |
Encyclopedia of Electrical & Electronics Engineering; 1999 1st Edition, Vol. 19, p43-59, 17p |
| Abstrakt: |
The article presents information on semiconductor epitaxial layers. The pervasiveness of silicon-based integrated circuits (ICs) in electronic systems continues as we step into the gigachip age with gigascale integration (GSI). Key to the fabrication of dense CMOS chips is the use of polycrystalline Si (poly-Si) as gate-electrode material. The use of poly-Si allows realization of a self-aligned structure, greatly improving the device characteristics by reducing parasitic capacitance. It also permits more complex structures to be fabricated because of its compatibility with high-temperature Si IC processing. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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