Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfxSi1–xO2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor.
| Autor: | Konashuk, Aleksei S., Filatova, Elena O., Bugaev, Aleksandr V., Sakhonenkov, Sergei S., Danilov, Denis V. |
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| Zdroj: | Journal of Physical Chemistry C; 5/25/2023, Vol. 127 Issue 20, p9759-9768, 10p |
| Databáze: | Supplemental Index |
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