Electrical Properties of HfO2 on Si1–xGex Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing.
| Autor: | Lee, Woohui, Lee, Jehoon, Eom, Deokjoon, Oh, Joohee, Park, Changyu, Kim, Jinyong, Shin, Hyungchul, Kim, Hyoungsub |
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| Zdroj: | ACS Applied Electronic Materials; 2/28/2023, Vol. 5 Issue 2, p1189-1195, 7p |
| Databáze: | Supplemental Index |
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