Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2.

Autor: Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik
Zdroj: ACS Applied Electronic Materials; 12/27/2022, Vol. 4 Issue 12, p6357-6363, 7p
Databáze: Supplemental Index