Tunnel Electroresistance in Hf0.5Zr0.5O2‑Based Ferroelectric Tunnel Junctions under Hysteresis: Approach of the Point Contact Model and the Linearized Thomas–Fermi Screening.

Autor: Useinov, Artur, Jagga, Deepali, Chang, Edward Yi
Zdroj: ACS Applied Electronic Materials; 5/24/2022, Vol. 4 Issue 5, p2238-2245, 8p
Databáze: Supplemental Index