Tunnel Electroresistance in Hf0.5Zr0.5O2‑Based Ferroelectric Tunnel Junctions under Hysteresis: Approach of the Point Contact Model and the Linearized Thomas–Fermi Screening.
Autor: | Useinov, Artur, Jagga, Deepali, Chang, Edward Yi |
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Zdroj: | ACS Applied Electronic Materials; 5/24/2022, Vol. 4 Issue 5, p2238-2245, 8p |
Databáze: | Supplemental Index |
Externí odkaz: |