Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors.
| Autor: | Lee, Baek-Ju, Seo, Dong-Won, Choi, Jae-Wook |
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| Zdroj: | Journal of the Korean Physical Society; Feb2022, Vol. 80 Issue 4, p311-319, 9p |
| Databáze: | Supplemental Index |
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