P–N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices.

Autor: Dae-Kyoung Kim, Seok-Bo Hong, Kwangsik Jeong, Changmin Lee, Hyoungsub Kim, Mann-Ho Cho
Zdroj: ACS Nano; 2/26/2019, Vol. 13 Issue 2, p1683-1693, 11p
Databáze: Supplemental Index