Characterization of the Interfacial Toughness in a Novel "GaN-on-Diamond" Material for High-Power RF Devices.

Autor: Dong Liu, Fabes, Stephen, Bo-Shiuan Li, Francis, Daniel, Ritchie, Robert O., Kuball, Martin
Zdroj: ACS Applied Electronic Materials; Mar2019, Vol. 1 Issue 3, p354-369, 16p
Databáze: Supplemental Index