Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors.
| Autor: | Ji, Hyunjin, Ghimire, Mohan Kumar, Lee, Gwanmu, Yi, Hojoon, Sakong, Wonkil, Gul, Hamza Zad, Yun, Yoojoo, Jiang, Jinbao, Kim, Joonggyu, Joo, Min-Kyu, Suh, Dongseok, Lim, Seong Chu |
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| Zdroj: | ACS Applied Materials & Interfaces; 8/14/2019, Vol. 11 Issue 32, p29022-29028, 7p |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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