| Autor: |
Gotlinsky, Barry, Mesawich, Michael, Hall, David |
| Předmět: |
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| Zdroj: |
Semiconductor International; Apr2004, Vol. 27 Issue 4, p63-66, 3p, 3 Black and White Photographs, 1 Chart, 1 Graph |
| Abstrakt: |
Discusses the role of filtration to reduce defects in lithography. Use of 193 nanometer lithography; Defect in lithography that can be detected after etching the wafer; Characteristics of filtration membrane; Information on acrylate-based 193 nanometer photoresists. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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