| Autor: |
Ivashchenko, V. I., Scrynskyy, P. L., Lytvyn, O., Rogoz, V. M., Sobol, O. V., Kuzmenko, A. P., Plotnikov, S. V. |
| Předmět: |
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| Zdroj: |
International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2014, p116-119, 4p |
| Abstrakt: |
NbN and Nb-Si-N films were deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various powers supplied to the Nb target, PNb. The films were investigated by an atomic force microscope (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The deposited films were annealed to establish their thermal stability. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si3N4 tissue (nc-δ-NbNx/a-Si3N4). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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