| Autor: |
R. Kiefer, R. Quay, S. Müller, T. Feltgen, B. Raynor, J. Schleife, K. Köhler, H. Massler, S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, G. Weimann |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (A); Nov2003, Vol. 200 Issue 1, p191-194, 4p |
| Abstrakt: |
The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of >13 dB at 60 GHz with 0.15 μm gate length. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
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