| Autor: |
Shigetoshi Ito, Yukio Yamasaki, Susumu Omi, Kunihiro Takatani, Toshiyuki Kawakami, Tomoki Ohno, Masaya Ishida, Yoshihiro Ueta, Takayuki Yuasa, Mototaka Taneya |
| Předmět: |
|
| Zdroj: |
Physica Status Solidi (A); Nov2003, Vol. 200 Issue 1, p131-134, 4p |
| Abstrakt: |
AlGaInN violet laser diodes grown on GaN substrates have been investigated. Waveguide simulations have been performed and a triple-cladding-layer (TCL) technique has been proposed for achieving a small radiation angle in the perpendicular direction to the junction plane. A TCL-type laser has been fabricated. The threshold current density and the slope efficiency were 2.9 kA/cm2 and 1.4 W/A, respectively. The radiation angle in the perpendicular direction was as small as 16°. A violet laser diode with a low aspect ratio of 1.6 has been realized. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Plný text