| Autor: |
Laube, J., Gutsch, S., Hiller, D., Bruns, M., Kübel, C., Weiss, C., Zacharias, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 22, p223501-1-223501-7, 7p, 1 Chart, 9 Graphs |
| Abstrakt: |
This paper reports the growth of silicon nanocrystals (SiNCs) from SiH4–O2 plasma chemistry. The formation of an oxynitride was avoided by using O2 instead of the widely used N2O as precursor. X-ray photoelectron spectroscopy is used to prove the absence of nitrogen in the layers and determine the film stoichiometry. It is shown that the Si rich film growth is achieved via nonequilibrium deposition that resembles a interphase clusters mixture model. Photoluminescence and Fourier transformed infrared spectroscopy are used to monitor the formation process of the SiNCs, to reveal that the phase separation is completed at lower temperatures as for SiNCs based on oxynitrides. Additionally, transmission electron microscopy proves that the SiNC sizes are well controllable by superlattice configuration, and as a result, the optical emission band of the Si nanocrystal can be tuned over a wide range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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