| Autor: |
Thanh Thuy Trinh, Kyungsoo Jang, Vinh Ai Dao, Junsin Yi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 21, p214504-1-214504-5, 5p, 2 Diagrams, 6 Graphs |
| Abstrakt: |
High mobility thin film transistors (TFTs) with a high conductivity amorphous InGaZnO (a-IGZO) active layer were successfully fabricated. The operation of the high-carrier-IGZO thin film transistor with a Schottky barrier (SB) was proposed and clearly experimentally explained. The switching characteristic of SB-TFT does not rely on the accumulation process but due to the Schottky barrier height control. Leakage current can be reduced by Schottky contact at the source/drain (S/D), while it was as high as the on current so that the switch properties could not achieve in ohmic ones. The a- IGZO SB-TFTs with Ag S/D contact express the high performance with lFE of 20.4 cm2V-1 s-1, Vth of 5.8 V, and ION/IOFF of 2×107 @ VD=1V. The introduction of operating mechanism for TFTs using high conductivity a-IGZO promises an expansion study for other active layer materials. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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