| Autor: |
Hafiz M W Khalil, Jung Tae Nam, Keun Soo Kim, Hwayong Noh |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 1/14/2015, Vol. 48 Issue 1, p1-1, 1p |
| Abstrakt: |
We have studied the effects of antimony (Sb) doping on graphene grown by chemical vapour deposition without any significant change in its electrical properties. By increasing the metal thickness from 1 to 5 nm, we found a shift in the wave numbers of Raman G and two-dimensional (2D) peaks consistent with n-doping and a change in the Fermi level of the graphene into the conduction band. The relative intensity of the D peak to the G peak did not show a significant change and that of the 2D peak to the G peak remained at a large enough number as a function of metal thickness, implying little degradation by the metal dopants. Transport measurements also confirm the n-doping of graphene through a shift of Dirac point in the transfer characteristics and the quality preservation with little changes in mobility. We also report on the formation of a p–n junction by metal doping on selected areas of the graphene and their electrical properties with transfer characteristics and Hall measurements. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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