Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well.

Autor: Balanta, M. A. G., Brasil, M. J. S. P., Iikawa, F., Brum, J. A., Mendes, Udson C., Danilov, Yu. A., Dorokhin, M. V., Vikhrova, Olga V., Zvonkov, Boris N.
Předmět:
Zdroj: Journal of Applied Physics; 2014, Vol. 116 Issue 20, p203501-1-203501-6, 6p, 1 Chart, 5 Graphs
Abstrakt: We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index