| Autor: |
Hepplestone, S. P., Sushko, P. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 19, p193703-1-193703-5, 5p, 3 Diagrams |
| Abstrakt: |
The electronic and structural properties of Mo(100)/GaAs(100) interfaces and Mo diffusion into GaAs are explored using first principle calculations. Our results show that the interface undergoes substantial atomic rearrangement with respect to the bulk structures and the bilayer of the GaAs adjacent to the interface becomes conducting. We study the n-type Schottky barrier height's dependence on Mo interdiffusion in the GaAs, with values ranging from ∼0.9 eV to ∼1.39 eV. This range is caused by the diffusants acting as additional n-type doping at the surface and their interaction with the metal-induced gap states. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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