| Autor: |
B J Murdoch, D G McCulloch, J G Partridge |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Dec2014, Vol. 29 Issue 12, p1-1, 1p |
| Abstrakt: |
Amorphous hafnium oxide films, energetically deposited at room temperature from a filtered cathodic vacuum arc (FCVA) onto Si substrates, exhibit low current leakage (11 μA cm−2 in an electric field of 100 kV cm−1), a dielectric constant (k) of 17 and a refractive index exceeding 2.1 over the visible spectrum. Cross-sectional transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy loss spectroscopy revealed an amorphous microstructure and higher film density when compared with HfO2 deposited by reactive direct-current magnetron sputtering. The superior properties and higher density of the FCVA HfO2 are attributed to the elevated energy of the depositing flux. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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