Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition.

Autor: Zhao, Q. X., Liu, X. J., Holtz, P. O.
Předmět:
Zdroj: Journal of Applied Physics; 2014, Vol. 116 Issue 18, p183508-1-183508-5, 5p, 1 Diagram, 1 Chart, 5 Graphs
Abstrakt: High quality Zn1-xMgxO epilayers have been grown by means of metal organic chemical vapor deposition technique on top of ZnO templates. The grown samples were investigated by x-ray photo-electron spectroscopy and photoluminescence. The magnesium (Mg) concentration was varied between 0% and 3% in order to study the properties of shallow donors. The free and donor bound excitons could be observed simultaneously in our high quality Zn1-xMgxO epilayers in the photoluminescence spectra. The results indicate that both built-in strain and Mg-concentration influence the donor exciton binding energy. It clearly shows that the donor exciton binding energy decreases with increasing Mg-concentration and with increasing built-in strain. Furthermore, the results indicate that the donor bound exciton transition energy increases with decreasing strength of the built-in strain if the Mg-concentration is kept the same in the Zn1-xMgxO epilayers. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index